triquint semiconductor texas phone: (972)994 8465 fax: (972)994 8504 web: www.triquint.com product data sheet january 18, 2002 1 6 - 18 ghz power amplifier TGA8014-SCC key features and performance ? 6 to 18 ghz frequency range ? 11 db typical gain ? greater than 0.5 watt output power at 1 db gain compression ? designed for balanced configuration ? unconditionally stable ? 3.6068 x 1.9304 x 0.1016 mm (0.142 x 0.076 x 0.004 in.) description the triquint TGA8014-SCC is a two-stage gaas monolithic medium power amplifier. reactively matched 914 um and 1219 um fets provide 11 db nominal gain with 16 percent typical power-added efficiency and output power at 1 db gain compression of 0.5 watt. ground is provided to the circuitry through vias to the backside metallization.the TGA8014-SCC provides 27 dbm typical output power at 1 db gain compression. the small size and inherent reliability advantages of a monolithic device over a hybrid design make this device attractive for use in a variety of military applications. used in a balanced configuration, the TGA8014-SCC effectively addresses applications such as driver and power stages in ew amplifiers, local oscillator buffers, and twt replacement amplifiers. bond pad and backside metallization is gold plated for compatibility with eutectic alloy attachment methods as well as the thermcompression and thermosonic wire- bonding processes. the TGA8014-SCC is supplied in chip form and is readily assembled using automated equipment.
triquint semiconductor texas phone: (972)994 8465 fax: (972)994 8504 web: www.triquint.com product data sheet january 18, 2002 2 TGA8014-SCC
triquint semiconductor texas phone: (972)994 8465 fax: (972)994 8504 web: www.triquint.com product data sheet january 18, 2002 3 table i maximum ratings symbol parameter value v + positive supply voltage 8.5v i + positive supply current (50% i dss ) 320ma to 462ma i - negative supply current -9.7ma v - negative supply voltage range C5v to 0v p d power dissipation, at (or below) 25 c base-plate temperature * 5w p in input continuous wave power 28 dbm t ch ** operating channel temperature 150 0 c t m mounting temperature (30 seconds) 320 0 c t stg storage temperature -65 to 150 0 c ratings over channel temperature range, t ch (unless otherwise noted) stresses beyond those listed under maximum ratings may cause permanent damage to the device. these are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under rf specifications is not implied. exposure to maximum rated conditions for extended periods may affect device reliability. *for operation above 25 c base-plate temperature, derate linearly at the rate of 10.8mw/ c. ** operating channel temperature, t ch , directly affects the device mttf. for maximum life, it is recommended that channel temperature be maintained at the lowest possible level. TGA8014-SCC
triquint semiconductor texas phone: (972)994 8465 fax: (972)994 8504 web: www.triquint.com product data sheet january 18, 2002 4 table ii dc probe tests (100%) (t a = 25 c + 5 c) notes symbol test conditions 3/ limits units min max 5/ i dss1 std 228 356 ma 5/ i dss2 std 305 475 ma 3/,5 / g m1 std 119 182 ms 3/,5 / g m2 std 159 243 ms 1/, 3 /,5 / |v p1 |std2.2 3.8 v 1/, 3 /,5 / |v p2 |std2.2 3.8 v 1/,5 / |v bvgd1 |std 830v 1/,5 / |v bvgd2 |std 830v 1/,5 / |v bvgs1 |std 830v 1/,5 / |v bvgs2 |std 830v 1/ v p , v bvgd , and v bvgs are negative. 2/ intermediate high current fet family is standard product since august 1, 1990. 3/ v dss = v ds @ i dss . 4/ the measurement conditions are subject to change at the manufactures discretion (with appropriate notification to the buyer). 5/ std refers to standard test conditions, see table iv. TGA8014-SCC
triquint semiconductor texas phone: (972)994 8465 fax: (972)994 8504 web: www.triquint.com product data sheet january 18, 2002 5 table iii rf specifications (t a = 25 c + 5 c) v + = 8v, i + = 341ma note test measurement conditions value units min typ max small-signal gain magnitude f = 6 C 18 ghz 8 11 db power output at 1 db gain compression f = 6 C 12 ghz f = 12 C 18 ghz 25.5 24 27 27 dbm dbm 2/ input standing wave ratio f = 6 C 18 ghz 4.5:1 output standing wave ratio f = 6 C 18 ghz 2.2:1 1/ gain drift f = 10 ghz 0.25 db output third order intercept point f = 10 ghz f = 18 ghz 36.7 36.7 dbm dbm 1/ gain drift shall be defined as the change in small signal gain from the application of dc power to 30 minutes. 2/ the TGA8014-SCC is intended strictly for use in a balanced configuration. TGA8014-SCC
triquint semiconductor texas phone: (972)994 8465 fax: (972)994 8504 web: www.triquint.com product data sheet january 18, 2002 6 table iv autoprobe fet parameter measurement conditons fet parameters test conditions i dss : maximum drain current (i ds ) with gate voltage (v gs ) at zero volts. v gs = 0.0 v, drain voltage (v ds ) is swept from 0.5 v up to a maximum of 3.5 v in search of the maximum value of i ds ; voltage for i dss is recorded as vdsp. g m : transconductance; i dss - ids1 () vg1 for all material types, v ds is swept between 0.5 v and vdsp in search of the maximum value of i ds . this maximum i ds is recorded as ids1. for intermediate and power material, ids1 is measured at v gs = vg1 = -0.5 v. for low noise, hfet and phemt material, v gs = vg1 = -0.25 v. for lnbecolc, use v gs = vg1 = -0.10 v. v p : pinch-off voltage; v gs for i ds = 0.5 ma/mm of gate width. v ds fixed at 2.0 v, v gs is swept to bring i ds to 0.5 ma/mm. v bvgd : breakdown voltage, gate-to-drain; gate-to- drain breakdown current (i bd ) = 1.0 ma/mm of gate width. drain fixed at ground, source not connected (floating), 1.0 ma/mm forced into gate, gate-to-drain voltage (v gd ) measured is v bvgd and recorded as bvgd; this cannot be measured if there are other dc connections between gate-drain, gate-source or drain-source. v bvgs : breakdown voltage, gate-to-source; gate-to- source breakdown current (i bs ) = 1.0 ma/mm of gate width. source fixed at ground, drain not connected (floating), 1.0 ma/mm forced into gate, gate-to- source voltage (v gs ) measured is v bvgs and recorded as bvgs; this cannot be measured if there are other dc connections between gate-drain, gate-source or drain-source. TGA8014-SCC
triquint semiconductor texas phone: (972)994 8465 fax: (972)994 8504 web: www.triquint.com product data sheet january 18, 2002 7 typical s-parameters frequency s 11 s 21 s 12 s 22 gain (ghz) mag ang mag ang mag ang mag ang (db) 6.0 0.55 176 3.55 29 0.002 167 0.36 4 11.0 6.5 0.58 173 3.69 -34 0.005 150 0.41 -35 11.3 7.0 0.66 168 3.73 -80 0.006 135 0.48 -73 11.4 7.5 0.73 160 3.98 -120 0.008 119 0.55 -105 12.0 8.0 0.77 150 4.25 -159 0.010 96 0.58 -135 12.6 8.5 0.79 142 4.36 163 0.010 77 0.57 -160 12.8 9.0 0.79 134 4.31 127 0.009 54 0.52 179 12.7 9.5 0.79 127 4.09 93 0.008 33 0.45 164 12.2 10.0 0.80 120 3.81 62 0.006 10 0.40 153 11.6 10.5 0.81 113 3.55 33 0.005 -10 0.38 143 11.0 11.0 0.82 105 3.39 8 0.004 -42 0.36 131 10.6 11.5 0.84 97 3.32 -18 0.004 -82 0.36 119 10.4 12.0 0.85 87 3.32 -42 0.004 -122 0.36 105 10.4 12.5 0.87 77 3.40 -68 0.005 -133 0.37 87 10.6 13.0 0.86 66 3.49 -94 0.006 -152 0.37 70 10.8 13.5 0.85 54 3.70 -121 0.010 180 0.40 52 11.4 14.0 0.82 40 3.89 -151 0.011 155 0.42 30 11.8 14.5 0.76 27 3.92 178 0.012 136 0.42 8 11.9 15.0 0.68 14 3.78 146 0.014 111 0.38 -13 11.6 15.5 0.60 6 3.59 118 0.014 78 0.31 -27 11.1 16.0 0.55 -4 3.43 89 0.015 39 0.28 -37 10.7 16.5 0.52 -16 3.32 59 0.010 -8 0.27 -51 10.4 17.0 0.47 -26 3.28 32 0.009 -4 0.23 -68 10.3 17.5 0.47 -43 3.39 1 0.017 -40 0.23 -88 10.6 18.0 0.46 -69 3.50 -34 0.017 -82 0.25 -119 10.9 reference planes for s-parameter data include bond wires as specified in the recommended assembly diagram. the s-parameters are also available on floppy disk and the world wide web. t a = 25 o c, v+ = 8 v, i+ = 50% i dss TGA8014-SCC
triquint semiconductor texas phone: (972)994 8465 fax: (972)994 8504 web: www.triquint.com product data sheet january 18, 2002 8 refer to triquints recommended assembly instructions for gaas products. rf connections: bond two 1-mil diameter, 25-mil-length gold bond wires at both rf input and rf output for optimum rf performance. close placement of external components is essential to stability. p arameter test condition nom unit r q jc thermal resistance (channel to backside) v + = 8 v, i + = 50% i ds s 30 c/w thermal information equivalent schematic recommended assembly diagram ________ gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. TGA8014-SCC
triquint semiconductor texas phone: (972)994 8465 fax: (972)994 8504 web: www.triquint.com product data sheet january 18, 2002 9 gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. mechanical drawing TGA8014-SCC
triquint semiconductor texas phone: (972)994 8465 fax: (972)994 8504 web: www.triquint.com product data sheet january 18, 2002 10 assembly process notes gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. reflow process assembly notes: use ausn (80/20) solder with limited exposure to temperatures at or above 300 ? c. an alloy station or conveyor furnace with reducing atmosphere should be used. no fluxes should be utilized. coefficient of thermal expansion matching is critical for long-term reliability. devices must be stored in a dry nitrogen atmosphere. component placement and adhesive attachment assembly notes: vacuum pencils and/or vacuum collets are the preferred method of pick up. air bridges must be avoided during placement. the force impact is critical during auto placement. organic attachment can be used in low-power applications. curing should be done in a convection oven; proper exhaust is a safety concern. microwave or radiant curing should not be used because of differential heating. coefficient of thermal expansion matching is critical. interconnect process assembly notes: thermosonic ball bonding is the preferred interconnect technique. force, time, and ultrasonics are critical parameters. aluminum wire should not be used. discrete fet devices with small pad sizes should be bonded with 0.0007-inch wire. maximum stage temperature is 200 ? c. TGA8014-SCC
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